Amorphization and defects prevention become key points to allow good recrystallization and activation after annealing while reducing the thermal budget. With the requirements of new device architecture such as FINFET or FD-SOI for Logic, reduction of cell sizes for Memories, or 3D integration for 'More than Moore' applications, a shallow profile is not the only critical objective. This technique also delivers a better CoO as the result of higher productivity, smaller footprint and lower operating costs. Plasma immersion ion implantation (PIII) technology is an alternative that overcomes the limitations of conventional beam line ion implantation for shallow, high dose and 3D doping on advanced memory and logic devices. The methods considered are positron annihilation spectroscopy, electron spin resonance, and approaches for electrical characterization of semiconductor devices. This chapter presents methods of defect spectroscopy to study the defect origin and characterize the defect density of states in thin film and semiconductor interfaces. Very minute concentrations of defects and impurities in semiconductors drastically alter their electrical and optical properties. The main feature of ion implantation is the formation of point defects in the energetic ion collisions. Originally developed from particle accelerator technology ion implanters operate in the energy range from tens eV to several MeV (corresponding to a few nm to several microns in depth). Owing to excellent controllability, uniformity, and the dose insensitive relative accuracy ion implantation has grown to be the principal doping technology used in the manufacturing of integrated circuits. The formation of metastable alloys above the solubility limit, minimized contribution of lateral diffusion processes in device fabrication, and possibility to reach high concentrations of doping impurities can be considered as distinct advantages of ion implantation. ![]() Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations.
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